Electro-optical apparatus, manufacturing method for electro-optical apparatus, and electronic device

ABSTRACT

An electro-optical apparatus includes a first pixel and a second pixel. The first pixel and the second pixel include a reflective layer, an insulating layer, a functional layer, and an opposing electrode. The insulating layer includes a first insulating layer, a second insulating layer having a first opening, and a third insulating layer having a second opening. A first pixel electrode is provided on the first insulating layer in the first opening. A second pixel electrode is provided on the second insulating layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a Continuation of application Ser. No. 16/144,633, filed Sep.27, 2018, which is a Continuation of application Ser. No. 15/460,888filed Mar. 16, 2017, which is a Continuation of application Ser. No.14/991,569 filed Jan. 8, 2016, which in turn is a Division ofapplication Ser. No. 14/291,825 filed May 30, 2014, which claims thebenefit of Japanese Application No. 2013-118567 filed Jun. 5, 2013. Thedisclosures of the prior applications are hereby incorporated byreference herein in their entirety.

BACKGROUND 1. Technical Field

The present invention relates to electro-optical apparatuses,manufacturing methods for such electro-optical apparatuses, andelectronic devices.

2. Related Art

An electro-optical apparatus that includes a first pixel, a secondpixel, and a third pixel emitting light at mutually differentwavelengths, and that has an optical resonance structure in which thethickness of an optical distance adjustment layer at the first pixel,the second pixel, and the third pixel is set so that the relationshipfirst pixel>second pixel>third pixel holds true, has been disclosed,along with a manufacturing method for the electro-optical apparatus(JP-A-2009-134067).

According to the manufacturing method for the electro-optical apparatusin JP-A-2009-134067, a light-transmissive film that configures theoptical distance adjustment layer is formed, and then a mask whosethickness achieves the relationship first pixel>second pixel>third pixelis formed on the light-transmissive film. Therefore, the opticaldistance adjustment layer whose thickness achieves the relationshipfirst pixel>second pixel>third pixel is formed by combining a process inwhich the mask having different thicknesses is removed through ashing instages with a process in which the light-transmissive film exposedthrough the ashing is etched.

It is necessary to produce a precise thickness in the optical distanceadjustment layer at the first pixel, the second pixel, and the thirdpixel in order to obtain light at desired resonant wavelengths in thefirst pixel, the second pixel, and the third pixel. However, themanufacturing method for an electro-optical apparatus according to theaforementioned JP-A-2009-134067 has a problem in that it is difficult toprecisely etch the light-transmissive film. For example, one reason forthis is that if the amount of the stated ashing carried out in stages isless than or more than a proper ashing amount, variations will beproduced in the thickness of the post-ashing mask, and thus thelight-transmissive film cannot be etched at a proper etching amountacross a desired range. Another reason that can be given is that it isdifficult to achieve stable etching conditions (etching speed and thelike), and it is therefore easy for variations to arise in the thicknessof the light-transmissive film after the etching.

Furthermore, there is demand to reduce steps between pixels to thegreatest extent possible in order to suppress a rise in electricalresistance at interconnects, electrodes, and the like that span thesteps between pixels.

SUMMARY

An advantage of some aspects of the invention is to provide anelectro-optical apparatus, a manufacturing method for an electro-opticalapparatus, and an electronic device; in order to solve at least some ofthe aforementioned problems, the invention can be implemented as thefollowing aspects or application examples.

First Aspect

An electro-optical apparatus according to a first aspect of theinvention includes a substrate, a first pixel formed above thesubstrate, and a second pixel adjacent to the first pixel; the firstpixel includes a light-reflective reflective layer, a light-reflectiveand light-transmissive opposing electrode, an insulating layer, a firstpixel electrode, and a functional layer including a light-emittinglayer; the second pixel includes the reflective layer, the opposingelectrode, the insulating layer, a second pixel electrode, and thefunctional layer; the insulating layer includes a first insulatinglayer, a second insulating layer having a first opening, and a thirdinsulating layer having a second opening; the first pixel electrode isprovided on the first insulating layer in the first opening; a secondopening includes the first opening; and the second pixel electrode isprovided in the second opening, on the second insulating layer.

According to this aspect of the invention, the first insulating layer ispresent between the reflective layer and the first pixel electrode, andthe first insulating layer and the second insulating layer are presentbetween the reflective layer and the second pixel electrode.Furthermore, the first insulating layer and the second insulating layerare present between the first pixel electrode and the second pixelelectrode that are adjacent to each other. Accordingly, a firstthickness of the insulating layer between the reflective layer and thefirst pixel electrode is different from a second thickness of theinsulating layer between the reflective layer and the second pixelelectrode, and a third thickness of the insulating layer at a regionbetween the first pixel electrode and the second pixel electrode isapproximately the same as the second thickness.

Therefore, the first insulating layer, the second insulating layer, andthe third insulating layer may be set to desired thicknesses whenforming those layers without etching the first insulating layer, asopposed to a case where a light-transmissive film is etched in stages inorder to vary the optical distances in the optical distance adjustmentlayer from pixel to pixel, as in JP-A-2009-134067. In other words, theoptical distance of the optical resonance structure can be adjustedprecisely from pixel to pixel, and thus an electro-optical apparatuscapable of obtaining light at desired resonant wavelengths in the firstpixel and the second pixel can be provided.

Second Aspect

An electro-optical apparatus according to another aspect of theinvention includes a substrate, a first pixel formed above thesubstrate, and a second pixel adjacent to the first pixel; the firstpixel includes a light-reflective reflective layer, a light-reflectiveand light-transmissive opposing electrode, an insulating layer, a firstpixel electrode, and a functional layer including a light-emittinglayer; the second pixel includes the reflective layer, the opposingelectrode, the insulating layer, and the functional layer; theinsulating layer includes a first insulating layer, a second insulatinglayer having a first opening, and a third insulating layer having asecond opening; the first pixel electrode is provided on the firstinsulating layer in the first opening; the third insulating layerpartially overlaps the second opening; the second opening overlaps thefirst pixel electrode; and the second pixel electrode is provided on thethird insulating layer in the first opening.

According to this aspect of the invention, the first insulating layer ispresent between the reflective layer and the first pixel electrode, andthe first insulating layer and the third insulating layer are presentbetween the reflective layer and the second pixel electrode.Furthermore, the first insulating layer and the third insulating layerare present between the first pixel electrode and the second pixelelectrode that are adjacent to each other. Accordingly, a firstthickness of the insulating layer between the reflective layer and thefirst pixel electrode is different from a second thickness of theinsulating layer between the reflective layer and the second pixelelectrode, and a third thickness of the insulating layer at a regionbetween the first pixel electrode and the second pixel electrode isapproximately the same as the second thickness.

Therefore, the first insulating layer, the second insulating layer, andthe third insulating layer may be set to desired thicknesses whenforming those layers without etching the first insulating layer, asopposed to a case where a light-transmissive film is etched in stages inorder to vary the optical distances in the optical distance adjustmentlayer from pixel to pixel, as in JP-A-2009-134067. In other words, theoptical distance of the optical resonance structure can be adjustedprecisely from pixel to pixel, and thus an electro-optical apparatuscapable of obtaining light at desired resonant wavelengths in the firstpixel and the second pixel can be provided.

It is preferable that the electro-optical apparatus further include athird pixel adjacent to the second pixel, and that the third pixelinclude the reflective layer, the opposing electrode, the insulatinglayer, a third pixel electrode, and the functional layer, and that thethird pixel electrode be provided on the third insulating layer.

According to this configuration, the thicknesses of the insulating layerbetween the reflective layer and the pixel electrode at the first pixel,the second pixel, and the third pixel fulfill the relationship firstpixel<second pixel<third pixel. In other words, an electro-opticalapparatus capable of obtaining light at desired resonant wavelengths inthe first pixel, the second pixel, and the third pixel can be provided.

It is preferable that in the electro-optical apparatus, a thickness ofthe insulating layer in a region between the second pixel electrode andthe third pixel electrode be the same as a thickness of the insulatinglayer between the reflective layer and the second pixel electrode.

In the electro-optical apparatus, it is preferable that the thirdinsulating layer be provided in an island shape in a positioncorresponding to the third pixel electrode.

According to these configurations, only a step corresponding to thethickness of the second insulating layer is produced between the firstpixel electrode and the second pixel electrode, and thus the stepbetween the first pixel electrode and the second pixel electrode can bemade smaller. Furthermore, only a step corresponding to the thickness ofthe third insulating layer is produced between the second pixelelectrode and the third pixel electrode, and thus the step between thesecond pixel electrode and the third pixel electrode can be madesmaller.

It is preferable that in the electro-optical apparatus, a thickness ofthe insulating layer in a region between the second pixel electrode andthe third pixel electrode be the same as a thickness of the insulatinglayer between the reflective layer and the third pixel electrode.

In the electro-optical apparatus, it is preferable that the thirdinsulating layer be provided in an island shape spanning from a positioncorresponding to the third pixel electrode to a position correspondingto the second pixel electrode.

According to these configurations, only a step corresponding to thethickness of the third insulating layer is formed between the firstpixel electrode and the second pixel electrode and between the secondpixel electrode and the third pixel electrode, and thus the step betweenthe first pixel electrode and the second pixel electrode and the stepbetween the second pixel electrode and the third pixel electrode can bemade smaller.

Furthermore, according to these configurations, making the steps betweenthe pixel electrodes smaller makes it easy to flatten the surfaces ofthe functional layer, the opposing electrode, a sealing film, and thelike provided on the respective pixel electrodes. In other words, theopposing electrode, interconnects, and so on that span the steps can beprevented from being cut. The sealing performance of a sealing film thatcovers the opposing electrode can be improved as well.

Third Aspect

A manufacturing method for an electro-optical apparatus according to anaspect of the invention is a manufacturing method for an electro-opticalapparatus including a substrate, a first pixel formed above thesubstrate, and a second pixel adjacent to the first pixel; the firstpixel includes a light-reflective reflective layer, a light-reflectiveand light-transmissive opposing electrode, an insulating layer, a firstpixel electrode, and a functional layer including a light-emittinglayer; the second pixel includes the reflective layer, the opposingelectrode, the insulating layer, a second pixel electrode, and thefunctional layer; and the insulating layer includes a first insulatinglayer, a second insulating layer, and a third insulating layer. Themethod includes forming the first insulating layer across the firstpixel and the second pixel, forming the second insulating layer abovethe first insulating layer; forming a first opening in the secondinsulating layer in a position corresponding to the first pixelelectrode, forming the third insulating layer above the secondinsulating layer; forming a second opening in the third insulating layerin a position corresponding to the first pixel electrode and the secondpixel electrode, forming the first pixel electrode on the firstinsulating layer in the first opening and forming the second pixelelectrode on the second insulating layer in the second opening, formingthe functional layer in contact with the first pixel electrode and thesecond pixel electrode, and forming the opposing electrode covering thefunctional layer.

According to this aspect of the invention, the first insulating layer isformed between the reflective layer and the first pixel electrode, andthe first insulating layer and the second insulating layer are formedbetween the reflective layer and the second pixel electrode.Furthermore, the first insulating layer and the second insulating layerare formed between the first pixel electrode and the second pixelelectrode that are adjacent to each other. Accordingly, a firstthickness of the insulating layer between the reflective layer and thefirst pixel electrode is different from a second thickness of theinsulating layer between the reflective layer and the second pixelelectrode, and a third thickness of the insulating layer at a regionbetween the first pixel electrode and the second pixel electrode isapproximately the same as the second thickness.

Therefore, the first insulating layer, the second insulating layer, andthe third insulating layer may be formed at desired thicknesses whenforming those layers without etching the first insulating layer, asopposed to a case where a light-transmissive film is etched in stages inorder to vary the optical distances in the optical distance adjustmentlayer from pixel to pixel, as in JP-A-2009-134067. In other words, theoptical distance of the optical resonance structure can be adjustedprecisely from pixel to pixel, and thus an electro-optical apparatuscapable of obtaining light at desired resonant wavelengths in the firstpixel and the second pixel can be manufactured.

Fourth Aspect

A manufacturing method for an electro-optical apparatus according to anaspect of the invention is a manufacturing method for an electro-opticalapparatus including a substrate, a first pixel formed above thesubstrate, and a second pixel adjacent to the first pixel; the firstpixel includes a light-reflective reflective layer, a light-reflectiveand light-transmissive opposing electrode, an insulating layer, a firstpixel electrode, and a functional layer including a light-emittinglayer; the second pixel includes the reflective layer, the opposingelectrode, the insulating layer, a second pixel electrode, and thefunctional layer; and the insulating layer includes a first insulatinglayer, a second insulating layer, and a third insulating layer. Themethod includes forming the first insulating layer across the firstpixel and the second pixel, forming the second insulating layer abovethe first insulating layer; forming a first opening in the secondinsulating layer in a position corresponding to the first pixelelectrode and the second pixel electrode, forming the third insulatinglayer above the second insulating layer; forming a second opening in thethird insulating layer in a position corresponding to the first pixelelectrode, forming the first pixel electrode on the first insulatinglayer in the second opening and forming the second pixel electrode onthe second insulating layer in the first opening, forming the functionallayer in contact with the first pixel electrode and the second pixelelectrode, and forming the opposing electrode covering the functionallayer.

According to this aspect of the invention, the first insulating layer isformed between the reflective layer and the first pixel electrode, andthe first insulating layer and the third insulating layer are formedbetween the reflective layer and the second pixel electrode.Furthermore, the first insulating layer and the third insulating layerare formed between the first pixel electrode and the second pixelelectrode that are adjacent to each other. Accordingly, a firstthickness of the insulating layer between the reflective layer and thefirst pixel electrode is different from a second thickness of theinsulating layer between the reflective layer and the second pixelelectrode, and a third thickness of the insulating layer at a regionbetween the first pixel electrode and the second pixel electrode isapproximately the same as the second thickness.

Therefore, the first insulating layer, the second insulating layer, andthe third insulating layer may be formed at desired thicknesses whenforming those layers without etching the first insulating layer, asopposed to a case where a light-transmissive film is etched in stages inorder to vary the optical distances in the optical distance adjustmentlayer from pixel to pixel, as in JP-A-2009-134067. In other words, theoptical distance of the optical resonance structure can be adjustedprecisely from pixel to pixel, and thus an electro-optical apparatuscapable of obtaining light at desired resonant wavelengths in the firstpixel and the second pixel can be provided.

It is preferable that the electro-optical apparatus further include athird pixel adjacent to the second pixel, and that the third pixelinclude the reflective layer, the opposing electrode, the insulatinglayer, a third pixel electrode, and the functional layer, and that thethird pixel electrode be formed on the third insulating layer in thestep of forming the first pixel electrode and the second pixelelectrode.

According to this aspect, the optical distance in the optical resonancestructure can be varied and adjusted precisely, and thus anelectro-optical apparatus capable of obtaining light at desired resonantwavelengths in the first pixel, the second pixel, and the third pixelcan be manufactured.

It is preferable that in the manufacturing method for theelectro-optical apparatus, the third insulating layer be formed in anisland shape in a position corresponding to the third pixel electrode inthe step of forming the third insulating layer.

It is preferable that in the manufacturing method for theelectro-optical apparatus, the third insulating layer be formed in anisland shape spanning from a position corresponding to the third pixelelectrode to a position corresponding to the second pixel electrode inthe step of forming the third insulating layer.

According to these methods, only a step corresponding to a difference inthe thickness of the insulating layers in the respective opticalresonance structures is produced between the first pixel electrode andthe second pixel electrode and between the second pixel electrode andthe third pixel electrode, and thus the steps between the pixelelectrodes can be made smaller.

Furthermore, according to these methods, making the steps between thepixel electrodes smaller makes it easy to flatten the surfaces of thefunctional layer, the opposing electrode, the sealing film, and the likeformed on the respective pixel electrodes. In other words, the opposingelectrode, interconnects, and so on that span the steps can be preventedfrom being cut. The sealing performance of the sealing film that coversthe opposing electrode can be improved as well.

Fifth Aspect

It is preferable that an electronic device according to another aspectof the invention include the electro-optical apparatus according to theaforementioned aspects.

Sixth Aspect

It is preferable that an electronic device according to another aspectof the invention include an electro-optical apparatus formed using themanufacturing method for an electro-optical apparatus according to theaforementioned aspects.

According to these aspects, light of a desired resonant wavelength canbe obtained on a pixel by pixel basis, and thus an electronic devicehaving superior optical properties can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanyingdrawings, wherein like numbers reference like elements.

FIG. 1 is a plan view illustrating the overall configuration of anorganic EL apparatus serving as an electro-optical apparatus accordingto a first embodiment.

FIG. 2 is an equivalent circuit diagram illustrating the electricalconfiguration of a light-emitting pixel.

FIG. 3 is a plan view illustrating the overall configuration of alight-emitting pixel.

FIG. 4 is a cross-sectional view illustrating the overall structure of alight-emitting pixel when cut along the X direction.

FIG. 5 is a cross-sectional view illustrating the overall structure of alight-emitting pixel when cut along the Y direction.

FIG. 6 is a flowchart illustrating a manufacturing method for an organicEL apparatus according to a first embodiment.

FIGS. 7A to 7F are cross-sectional views illustrating an overview of amanufacturing method for an organic EL apparatus according to the firstembodiment.

FIG. 8 is a plan view illustrating the overall configuration of alight-emitting pixel in an organic EL apparatus according to a secondembodiment.

FIG. 9 is a cross-sectional view, taken along the X direction,illustrating the overall structure of the light-emitting pixel in theorganic EL apparatus according to the second embodiment.

FIG. 10 is a cross-sectional view, taken along the Y direction,illustrating the overall structure of the light-emitting pixel in theorganic EL apparatus according to the second embodiment.

FIG. 11 is a flowchart illustrating a manufacturing method for anorganic EL apparatus according to the second embodiment.

FIGS. 12A to 12F are cross-sectional views illustrating an overview of amanufacturing method for the organic EL apparatus according to thesecond embodiment.

FIG. 13 is a schematic diagram illustrating a head-mounted displayserving as an example of an electronic device.

FIG. 14 is a plan view illustrating an overview of the location of athird insulating layer in an organic EL apparatus according to a firstvariation.

FIG. 15 is a plan view illustrating an overview of the location of athird insulating layer in an organic EL apparatus according to a secondvariation.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinafter, specific embodiments of the invention will be describedbased on the drawings. Note that the drawings used here illustrate theareas being described in an enlarged or reduced manner so that thoseareas can be recognized properly.

Note also that in the following embodiments, the phrase “above asubstrate”, for example, can refer to a constituent element beingdisposed directly on top of the substrate, a constituent element beingdisposed on top of the substrate with another constituent elementprovided therebetween, or part of the constituent element being disposeddirectly on top of the substrate while another part is disposed on topof the substrate with another constituent element provided therebetween.

First Embodiment Electro-Optical Apparatus

First, an organic electroluminescence apparatus (called an “organic ELapparatus” hereinafter) will be described as an example of anelectro-optical apparatus according to this embodiment, with referenceto FIGS. 1 to 3.

FIG. 1 is a plan view illustrating the overall configuration of theorganic EL apparatus serving as the electro-optical apparatus accordingto the first embodiment, FIG. 2 is an equivalent circuit diagramillustrating the electrical configuration of a light-emitting pixel, andFIG. 3 is a plan view illustrating the overall configuration of thelight-emitting pixel.

As shown in FIG. 1, an organic EL apparatus 100 serving as theelectro-optical apparatus according to this embodiment includes anelement substrate 10 serving as a substrate, a plurality oflight-emitting pixels 20 disposed in a matrix in a display region E ofthe element substrate 10, a data line driving circuit 101 and scanningline driving circuits 102 serving as peripheral circuits for controllingthe driving of the plurality of light-emitting pixels 20, and aplurality of external connection terminals 103 for establishing anelectrical connection with an external circuit.

The light-emitting pixels 20 include light-emitting pixels 20B fromwhich blue (B) light is emitted, light-emitting pixels 20G from whichgreen (G) light is emitted, and light-emitting pixels 20R from which red(R) light is emitted. The light-emitting pixels 20 from which the samecolor of light is emitted are arranged in the vertical direction in FIG.1, and the light-emitting pixels 20 from which different colors of lightare emitted are disposed in B, G, R order, repeating along thehorizontal direction in FIG. 1. Such an arrangement for thelight-emitting pixels 20 is known as a “striped” system, but theconfiguration is not limited thereto. For example, the arrangement inthe horizontal direction of the light-emitting pixels 20 from whichdifferent colors of light are emitted need not be in B, G, R order, andmay be in R, G, B order instead.

The following will describe the vertical direction in which thelight-emitting pixels 20 from which the same color of light is emittedare arranged as a Y direction, and a direction orthogonal to the Ydirection as an X direction.

Although the configuration of the light-emitting pixels 20 will bedescribed in detail later, in this embodiment, each of thelight-emitting pixels 20B, 20G, and 20R includes an organicelectroluminescence element (called an “organic EL element” hereinafter)serving as a light-emitting element and a color filter that correspondsto the color, namely B, G, or R, of the pixel, and a full-color displaycan be carried out by converting light emitted from the organic ELelements into B, G, and R light. Furthermore, an optical resonancestructure, which improves the brightness of specific wavelengths in therange of wavelengths of light emitted from the organic EL elements, isconfigured for each of the light-emitting pixels 20B, 20G, and 20R.

In the organic EL apparatus 100, the light-emitting pixels 20B, 20G, and20R function as sub pixels, and a single pixel unit in an image displayis configured by three light-emitting pixels 20B, 20G, and 20R that emitB, G, and R light, respectively. Note that the configuration of thepixel unit is not limited thereto, and a light-emitting pixel 20 fromwhich a color of light aside from B, G, and R is emitted (includingwhite light) may be included in the pixel unit as well.

The plurality of external connection terminals 103 are arranged in the Xdirection along a first side area of the element substrate 10. The dataline driving circuit 101 is disposed between the external connectionterminals 103 and the display region E along the Y direction, extendingin the X direction. A pair of the scanning line driving circuits 102 isprovided so as to oppose each other in the X direction with the displayregion E located therebetween.

As described above, the plurality of light-emitting pixels 20 areprovided in a matrix in the display region E, and as shown in FIG. 2,scanning lines 11, data lines 12, lighting control lines 13, and powerlines 14 are provided as signal lines for the respective light-emittingpixels 20 in the element substrate 10.

In this embodiment, scanning lines 11 and the lighting control lines 13extend parallel to each other in the X direction, whereas the data lines12 and the power lines 14 extend parallel to each other in the Ydirection.

A plurality of the scanning lines 11 and a plurality of the lightingcontrol lines 13 are provided in the display region E, corresponding toM rows of the plurality of light-emitting pixels 20 disposed in amatrix, and are each connected to the pair of scanning line drivingcircuits 102 illustrated in FIG. 1. Likewise, a plurality of the datalines 12 and a plurality of the power lines 14 are providedcorresponding to N columns of the plurality of light-emitting pixels 20arranged in a matrix, with the plurality of data lines 12 beingconnected to the data line driving circuit 101 illustrated in FIG. 1 andthe plurality of power lines 14 being connected to one of the pluralityof external connection terminals 103.

A first transistor 21, a second transistor 22, a third transistor 23, astorage capacitance 24, and an organic EL element 30 serving as alight-emitting element are provided near each intersection of thescanning lines 11 and the data lines 12, so as to configure pixelcircuits of the light-emitting pixels 20.

The organic EL element 30 includes a pixel electrode 31 serving as ananode, an opposing electrode 33 serving as a cathode, and a functionallayer 32, containing a light-emitting layer, sandwiched between the twoelectrodes. The opposing electrode 33 is a common electrode providedacross all of the plurality of light-emitting pixels 20, and a referencepotential Vss, a GND potential, or the like, which are lower than apower voltage Vdd supplied to the power lines 14, is applied to theopposing electrode 33, for example.

The first transistor 21 and the third transistor 23 are, for example,n-channel transistors. The second transistor 22 is, for example, ap-channel transistor.

Of the first transistor 21, a gate electrode is connected to thescanning line 11, one current terminal is connected to the data line 12,and the other current terminal is connected to a gate electrode of thesecond transistor 22 and one electrode of the storage capacitance 24.

One current terminal of the second transistor 22 is connected to thepower line 14 as well as the other electrode of the storage capacitance24. The other current terminal of the second transistor 22 is connectedto one current terminal of the third transistor 23. To rephrase, of thepair of current terminals, the second transistor 22 and the thirdtransistor 23 share one of the current terminals.

Of the third transistor 23, a gate electrode is connected to thelighting control line 13, and the other current terminal is connected tothe pixel electrode 31 of the organic EL element 30.

In the first transistor 21, the second transistor 22, and the thirdtransistor 23, one of the pair of current terminals serves as a sourceand the other of the current terminals serves as a drain.

In this pixel circuit, when the voltage level of a scanning signal Yisupplied from the scanning line driving circuits 102 to the scanningline 11 goes to Hi level, the n-channel first transistor 21 turns on.The data line 12 and the storage capacitance 24 are electricallyconnected by the first transistor 21 turning on. Then, when a datasignal is supplied to the data line 12 from the data line drivingcircuit 101, a potential difference between a voltage level Vdata of thedata signal and the power voltage Vdd supplied to the power line 14 isstored in the storage capacitance 24.

When the voltage level of the scanning signal Yi supplied to thescanning line 11 from the scanning line driving circuits 102 goes to Lowlevel, the n-channel first transistor 21 turns off, and a voltage Vgsbetween the gate and source of the second transistor 22 is held at avoltage present when the voltage level Vdata was supplied. Meanwhile,after the scanning signal Yi has gone to Low, the voltage level of alighting control signal Vgi supplied to the lighting control line 13goes to Hi level, and the third transistor 23 is turned on. As a result,a current based on the gate-source voltage Vgs in the second transistor22 flows between the source and drain of the second transistor 22.Specifically, this current flows from the power line 14, through thesecond transistor 22 and the third transistor 23, and reaches theorganic EL element 30.

The organic EL element 30 emits light in accordance with the magnitudeof the current flowing through the organic EL element 30. The currentflowing through the organic EL element 30 is determined by the operatingpoint between the second transistor 22 and the organic EL element 30 setat the voltage Vgs between the gate and the source of the secondtransistor 22. The voltage Vgs between the gate and the source of thesecond transistor 22 is a voltage stored in the storage capacitance 24due to the potential difference between the voltage level Vdata of thedata line 12 and the power voltage Vdd when the scanning signal Yi is atHi level. In this manner, the brightness of the light emitted from thelight-emitting pixel 20 is defined by the voltage level Vdata of thedata signal and the length of the period for which the third transistor23 is on. In other words, a tone of a brightness based on imageinformation can be applied to the light-emitting pixel 20 based on thevalue of the voltage level Vdata of the data signal, making it possibleto carry out a full-color display.

Note that in this embodiment, the pixel circuit of the light-emittingpixel 20 is not limited to a configuration that has the threetransistors 21, 22, and 23, and may be configured so as to have aswitching transistor and a driving transistor. Furthermore, thetransistors of which the pixel circuit is configured may be n-channeltransistors, p-channel transistors, or may include both re-channeltransistors and p-channel transistors. Furthermore, the transistors ofwhich the pixel circuit of the light-emitting pixel 20 is configured maybe MOS-type transistors having active layers on a semiconductorsubstrate, thin-film transistors, or field effect transistors.

Furthermore, although the locations of the signal lines aside from thescanning lines 11 and the data lines 12, namely the lighting controllines 13 and the power lines 14, are affected by the locations where thetransistors, the storage capacitance 24, and so on are disposed, theinvention is not limited thereto.

Hereinafter, this embodiment will describe an example in which MOS-typetransistors having active layers on a semiconductor substrate areemployed as the transistors of which the pixel circuit of thelight-emitting pixel 20 is configured.

Configuration of Light-Emitting Pixel

A specific configuration of the light-emitting pixels 20 will bedescribed with reference to FIG. 3. As shown in FIG. 3, each of thelight-emitting pixels 20B, 20G, and 20R has a rectangular shape whenviewed from above, with the lengthwise direction thereof following the Ydirection. The organic EL element 30 configured as the equivalentcircuit shown in FIG. 2 is provided in each of the light-emitting pixels20B, 20G, and 20R. The organic EL elements 30 may be referred to asorganic EL elements 30B, 30G, and 30R in order to distinguish theorganic EL elements 30 provided in corresponding light-emitting pixels20B, 20G, and 20R. Furthermore, the pixel electrodes 31 in the organicEL elements 30 may be referred to as pixel electrodes 31B, 31G, and 31Rin order to distinguish the pixel electrodes 31 provided incorresponding light-emitting pixels 20B, 20G, and 20R.

The pixel electrode 31B and a contact portion 31Bc that electricallyconnects the pixel electrode 31B to the third transistor 23 are providedin the light-emitting pixel 20B. Likewise, the pixel electrode 31G and acontact portion 31Gc that electrically connects the pixel electrode 31Gto the third transistor 23 are provided in the light-emitting pixel 20G.The pixel electrode 31R and a contact portion 31Rc that electricallyconnects the pixel electrode 31R to the third transistor 23 are providedin the light-emitting pixel 20R.

The pixel electrodes 31B, 31G, and 31R are also approximatelyrectangular when viewed from above, and the contact portions 31Bc, 31Gc,and 31Rc are disposed toward the tops of the corresponding pixelelectrodes in the lengthwise directions thereof.

The light-emitting pixels 20B, 20G, and 20R have an insulative structurethat electrically insulates adjacent pixel electrodes 31 from eachother, and in which openings 29B, 29G, and 29R that define regions thatmake contact with the functional layer 32 (see FIG. 4) are formed on thepixel electrodes 31B, 31G, and 31R.

Note that in this embodiment, the light-emitting pixel 20B correspondsto a first pixel according to the invention, the light-emitting pixel20G corresponds to a second pixel according to the invention, and thelight-emitting pixel 20R corresponds to a third pixel according to theinvention. Accordingly, the pixel electrode 31B corresponds to a firstpixel electrode according to the invention, the pixel electrode 31Gcorresponds to a second pixel electrode according to the invention, andthe pixel electrode 31R corresponds to a third pixel electrode accordingto the invention.

Meanwhile, the portions defined by the openings 29B, 29G, and 29R in thestated insulative structure that make contact with the functional layer32 substantially function as the pixel electrodes 31B, 31G, and 31R thatinject a charge into the functional layer 32 of the organic EL elements30B, 30G, and 30R. Accordingly, in the pixel electrodes 31B, 31G, and31R, portions covered by a fourth insulating layer 29 (mentioned later;see FIGS. 4 and 5) serve as interconnect portions electrically connectedto the third transistor 23 via the stated contact portions 31Bc, 31Gc,and 31Rc, respectively. In other words, it can be said that the portionsof the pixel electrodes 31B, 31G, and 31R that make contact with thefunctional layer 32 correspond to the first pixel electrode, the secondpixel electrode, and the third pixel electrode according to theinvention.

Next, the structure of the light-emitting pixels 20 will be describedwith reference to FIGS. 4 and 5. FIG. 4 is a cross-sectional viewillustrating the overall structure of the light-emitting pixels when cutalong the X direction, and FIG. 5 is a cross-sectional view illustratingthe overall structure of the light-emitting pixels when cut along the Ydirection. Note that of the pixel circuit, FIG. 4 illustrates the firsttransistors 21 and the second transistors 22 as well as theinterconnects and so on related to the first transistors 21 and thesecond transistors 22, but does not show the third transistors 23.Likewise, of the pixel circuit, FIG. 5 illustrates the secondtransistors 22 and the third transistors 23 as well as the interconnectsand so on related to the second transistors 22 and the third transistors23, but does not show the first transistors 21. Furthermore, FIG. 5illustrates the structure when the light-emitting pixel 20G is cut alongthe Y direction.

As shown in FIG. 4, the organic EL apparatus 100 includes the elementsubstrate 10 in which the light-emitting pixels 20B, 20G, and 20R, acolor filter 50, and so on are formed, and a light-transmissive sealingsubstrate 70. The element substrate 10 and the sealing substrate 70 areaffixed to each other by a resin layer 60 that is both adhesive andtransparent. The color filter 50 includes filter layers 50B, 50G, and50R corresponding to the respective B, G, and R colors. The filterlayers 50B, 50G, and 50R are disposed in the element substrate 10 so asto correspond to the respective light-emitting pixels 20B, 20G, and 20R.Light emitted from the functional layer 32 passes through one of thecorresponding filter layers 50B, 50G, and 50R and is emitted from thesealing substrate 70 side. In other words, the organic EL apparatus 100has a top emission structure.

Because the organic EL apparatus 100 has a top emission structure, asubstrate 10 s of the element substrate 10 is not limited to atransparent glass substrate, and can be an opaque ceramic substrate, asemiconductor substrate, or the like.

In this embodiment, a semiconductor substrate is used as the substrate10 s. The semiconductor substrate is a silicon substrate, for example.

Well portions 10 w formed by injecting ions into the semiconductorsubstrate and ion injection portions 10 d that are an active layerformed by injecting a different type of ion than the well portions 10 winto the well portions 10 w are provided in the substrate 10 s. The wellportions 10 w function as channels for the transistors 21, 22, and 23 inthe light-emitting pixels 20, and the ion injection portions 10 dfunction as the source/drain and part of the interconnects of thetransistors 21, 22, and 23 in the light-emitting pixels 20.

Next, an insulating film 10 a is formed so as to cover the surface ofthe substrate 10 s on which the ion injection portions 10 d and the wellportions 10 w are formed. The insulating film 10 a functions as a gateinsulating film. A conductive layer such as polysilicon is deposited onthe insulating film 10 a, and gate electrodes 22 g are formed bypatterning the conductive layer. The gate electrodes 22 g are disposedso as to oppose corresponding well portions 10 w that function as thechannels of the second transistors 22. Gate electrodes are disposed inthe same manner in the first transistors 21 and the third transistors 23as well.

Next, a first interlayer insulating film 15 is formed so as to cover thegate electrodes 22 g. Contact holes extending to the drains of the firsttransistors 21, the gate electrodes 22 g of the second transistors 22,and so on, for example, are formed so as to pass through the firstinterlayer insulating film 15. A conductive film that covers the surfaceof the first interlayer insulating film 15 is deposited so as to coverat least the interior of the contact holes, and interconnects thatconnect drain electrodes 21 d of the first transistors 21 with the gateelectrodes 22 g of the second transistors 22, for example, are formed bypatterning the conductive film.

Next, a second interlayer insulating film 16 is formed so as to coverthe various types of interconnects on the first interlayer insulatingfilm 15. Contact holes extending to the interconnects formed on thefirst interlayer insulating film 15 are formed so as to pass through thesecond interlayer insulating film 16. A conductive film that covers thesurface of the second interlayer insulating film 16 is deposited so asto cover at least the interior of the contact holes, and contactportions that electrically connect one electrode 24 a of each storagecapacitance 24 with the gate electrodes 22 g of the second transistors22, for example, are formed by patterning the conductive film. The datalines 12 are formed in the same layer as the electrodes 24 a. The datalines 12 are connected to the sources of the first transistors 21 byinterconnects (not shown in FIG. 4).

Next, a dielectric layer (not shown in FIG. 4) is formed so as to coverat least the one-side electrodes 24 a. Other electrodes 24 b of theother side of the storage capacitance 24 are formed in positionsopposing the corresponding electrodes 24 a with the dielectric layerprovided therebetween. Through this, the storage capacitances 24 areformed, having the dielectric layer between the pairs of electrodes 24 aand 24 b.

Next, a third interlayer insulating film 17 is formed so as to cover thedata lines 12 and the storage capacitances 24. Contact holes extendingto the other electrodes 24 b of the storage capacitances 24,interconnects formed on the second interlayer insulating film 16, and soon, for example, are formed so as to pass through the third interlayerinsulating film 17. A conductive film that covers the surface of thethird interlayer insulating film 17 is deposited so as to cover at leastthe interior of the contact holes, and contact portions that connect thepower lines 14, the power lines 14 and the other electrodes 24 b, and soon are formed by patterning the conductive film. In this embodiment, thepower lines 14 are formed of a metal such as Al (aluminum), Ag (silver),or an alloy of those metals, so as to be both light-reflective andconductive. Furthermore, the power lines 14 are formed opposing thepixel electrodes 31B, 31G, and 31R across the entire plane of thedisplay region E, aside from areas that overlap with the contactportions 31Bc, 31Gc, and 31Rc of the light-emitting pixels 20B, 20G, and20R (see FIG. 3). The areas of the power lines 14 opposing the pixelelectrodes 31B, 31G, and 31R function as a reflective layer.

Note that the configuration may instead be such that the power lines 14are formed of a conductive material and a reflective layer is providedbetween the power lines 14 and the pixel electrodes 31B, 31G, and 31R.

Here, the cross-sectional structure of the light-emitting pixels 20 (thelight-emitting pixels 20G), following the Y direction, will be describedwith reference to FIG. 5. As shown in FIG. 5, the well portions 10 wthat are shared by the second transistors 22 and the third transistors23 are provided in the substrate 10 s. Three of the ion injectionportions 10 d are provided in each of the well portions 10 w. Of thethree ion injection portions 10 d, the ion injection portions 10 dlocated in the middle function as drains 22 d (23 d) shared by thesecond transistors 22 and the third transistors 23. The insulating film10 a is provided covering the well portions 10 w. A conductive film suchas polysilicon is deposited so as to cover the insulating film 10 a, andthe gate electrodes 22 g of the second transistors 22 and gateelectrodes 23 g of the third transistors 23 are then formed on theinsulating film 10 a by patterning the conductive film. The gateelectrodes 22 g and 23 g are disposed so as to oppose respective areasof the well portions 10 w between the ion injection portions 10 d in thecenter and the ion injection portions 10 d on the sides that function aschannels.

Next, the gate electrodes 22 g of the second transistors 22 areconnected to the electrodes 24 a of the storage capacitances 24 providedon the second interlayer insulating film 16 by contact holes that passthrough the first interlayer insulating film 15 and the secondinterlayer insulating film 16. Source electrodes 22 s of the secondtransistors 22 are connected to the power lines 14 provided on the thirdinterlayer insulating film 17 by the contact holes that pass through thesecond interlayer insulating film 16 and the third interlayer insulatingfilm 17.

The gate electrodes 23 g of the third transistors 23 are connected tothe lighting control lines 13 provided on the first interlayerinsulating film 15 by the contact holes that pass through the firstinterlayer insulating film 15. In addition to the lighting control lines13, the scanning lines 11 are provided on the first interlayerinsulating film 15. The scanning lines 11 are connected to the gates ofthe first transistors 21 via contact holes (not shown in FIG. 5).

Source electrodes 23 s of the third transistors 23 are connected tointerconnects 106 provided on an insulating layer 28 (a third insulatinglayer 27) by contact holes that pass through the second interlayerinsulating film 16, the third interlayer insulating film 17, and theinsulating layer 28. The interconnects 106 are provided corresponding tothe contact portions 31Gc of the light-emitting pixels 20G, and anelectrical connection is achieved by the interconnects 106 and the pixelelectrodes 31G making contact at the contact portions 31Gc.

Electrical connections with the source electrodes 23 s of the thirdtransistors 23 corresponding to the pixel electrodes 31B and 31R of thelight-emitting pixels 20B and 20R are made via the contact portions 31Bcand the contact portions 31Rc, in the same manner as with thelight-emitting pixels 20G (see FIG. 3).

The organic EL elements 30 are provided on the power lines 14 thatfunction as a reflective layer. Meanwhile, an optical resonancestructure capable of obtaining light at different resonant wavelengthsfor each of the light-emitting pixels 20B, 20G, and 20R is constructedon the power lines 14. The power lines 14 are formed so as to cover thesurface of the third interlayer insulating film 17 across the displayregion E in which the light-emitting pixels 20B, 20G, and 20R areprovided, when viewed from above. In addition, the power lines 14 arepatterned in areas aside from the areas where the contact portions 31Bc,31Gc, and 31Rc, which achieve electrical connections with the thirdtransistors 23 corresponding to the respective pixel electrodes 31B,31G, and 31R, are provided. Accordingly, the structure makes itdifficult for non-planarities resulting from the pixel circuitstructures provided in layers below the power lines 14 to affect theoptical resonance structure provided in the layers above the power lines14.

The optical resonance structure provided in the layers above the powerlines 14 corresponds to a characteristic portion of the invention, andthus will be described in detail with reference to FIGS. 6 and 7hereinafter as a manufacturing method for the electro-optical apparatusaccording to this embodiment. FIG. 6 is a flowchart illustrating themanufacturing method for the organic EL apparatus according to the firstembodiment, and FIGS. 7A to 7F are cross-sectional views illustrating anoverview of the manufacturing method for the organic EL apparatusaccording to the first embodiment. Note that FIGS. 7A to 7F correspondto the overall cross-sectional view along the X direction of thelight-emitting pixels 20B, 20G, and 20R shown in FIG. 4, and the pixelcircuits, interconnects, and so on provided in the layers of thesubstrate 10 s below the power lines 14 are not shown.

Manufacturing Method for Electro-Optical Apparatus

A manufacturing method for the organic EL apparatus 100 serving as theelectro-optical apparatus according to this embodiment includes, asshown in FIG. 6, a first insulating layer formation process (step S1), asecond insulating layer formation process (step S2), a third insulatinglayer formation process (step S3), a second opening formation process(step S4), a first opening formation process (step S5), a pixelelectrode formation process (step S6), a fourth insulating layerformation process (step S7), a functional layer formation process (stepS8), and an opposing electrode formation process (step S9).

In step S1 to step S3 of FIG. 6, a first insulating layer 25 is formedso as to cover the power line 14, as shown in FIG. 7A. Then, a secondinsulating layer 26 and the third insulating layer 27 are formed inlayers upon the first insulating layer 25. In this embodiment, siliconnitride (SiN) is used as the insulating material of which the firstinsulating layer 25 is formed. Meanwhile, silicon oxide (SiO₂) is usedas the insulating material of which the second insulating layer 26 andthe third insulating layer 27 are formed. Different insulating materialsare used in this manner so as to provide the first insulating layer 25with an etching selection ratio when patterning the second insulatinglayer 26 and the third insulating layer 27, which is carried out in alater stage. The first insulating layer 25, the second insulating layer26, and the third insulating layer 27 layered in this order are referredto collectively as the insulating layer 28. The process then advances tostep S4.

Next, in step S4 of FIG. 6, a photosensitive resist layer is formed soas to cover the insulating layer 28, and a resist pattern 81 is formedby exposing and developing the resist layer, as shown in FIG. 7B. Anopening 81 a that corresponds to a second opening 27 a (see FIG. 7C) isformed in the resist pattern 81. Then, by partially etching the thirdinsulating layer 27 exposed in the opening 81 a, the second opening 27a, in which the pixel electrode 31B of the light-emitting pixel 20B andthe pixel electrode 31G of the light-emitting pixel 20G will be disposedlater when viewed from above, is formed, as shown in FIGS. 3 and 7C. Asthe method for etching the third insulating layer 27 that is formed ofsilicon oxide, it is preferable to employ dry etching using a processinggas containing fluorine, such as CF₄, C₂F₈, or the like. The processthen advances to step S5.

In step S5 of FIG. 6, a photosensitive resist layer is formed so as tocover the insulating layer 28, and a resist pattern 82 is formed byexposing and developing the resist layer, as shown in FIG. 7D. Anopening 82 a that corresponds to a first opening 26 a is formed in theresist pattern 82. The resist pattern 82 is formed covering the secondopening 27 a so that one end of the opening 82 a is at the same positionas one end of the second opening 27 a in the third insulating layer 27,and approximately half of the surface area of the second insulatinglayer 26 is exposed in the second opening 27 a. The first opening 26 a,in which the pixel electrode 31B of the light-emitting pixel 20B will bedisposed later, is formed in the second opening 27 a when viewed fromabove, by partially etching the second insulating layer 26 exposedwithin the second opening 27 a, as shown in FIGS. 3 and 7E. The same dryetching method as used for the third insulating layer 27 is used to etchthe second insulating layer 26. The process then advances to step S6.

In step S6 of FIG. 6, as shown in FIG. 7F, a transparent conductive filmis deposited so as to cover the first opening 26 a and the secondopening 27 a as well as the third insulating layer 27; the pixelelectrode 31B is formed within the first opening 26 a, the pixelelectrode 31G is formed within the second opening 27 a, and the pixelelectrode 31R is formed on the third insulating layer 27 by patterningthe transparent conductive film. The transparent conductive film is anindium tin oxide (ITO) film or an indium zinc oxide (IZO) film, forexample. The pixel electrodes 31B, 31G, and 31R are approximately 100 nmthick. As a result, the first insulating layer 25 is present between thepower line 14 and the pixel electrode 31B, the first insulating layer 25and the second insulating layer 26 are present between the power line 14and the pixel electrode 31G, and the first insulating layer 25, thesecond insulating layer 26, and the third insulating layer 27 arepresent between the power line 14 and the pixel electrode 31R. Theseinsulating layers will be referred to simply as the insulating layer 28hereinafter, regardless of the number of insulating layers disposedbetween the power line 14 and the pixel electrodes 31. When an averagethickness of the first insulating layer 25 is represented by d1, anaverage thickness of the second insulating layer 26 is represented byd2, and an average thickness of the third insulating layer 27 isrepresented by d3, the thickness of the insulating layer 28 between thepixel electrode 31B and the pixel electrode 31G is d4, obtained byadding d1 and d2. Furthermore, the thickness of the insulating layer 28between the pixel electrode 31G and the pixel electrode 31R is d5,obtained by adding d1, d2, and d3. To rephrase, a step equivalent to d2is produced in the X direction between the pixel electrode 31B and thepixel electrode 31G. Likewise, a step equivalent to d3 is producedbetween the pixel electrode 31G and the pixel electrode 31R in the Xdirection. The process then advances to step S7.

In step S7 of FIG. 6, the fourth insulating layer 29 is formed so as tocover the pixel electrodes 31B, 31G, and 31R. The fourth insulatinglayer 29 is formed using silicon oxide (SiO₂), for example. Then, theopenings 29B, 29G, and 29R are formed on the pixel electrodes 31B, 31G,and 31R by partially etching the fourth insulating layer 29, so as todefine the regions of contact between the functional layer 32 that isformed thereafter and the pixel electrodes 31B, 31G, and 31R (see FIGS.3 and 4). The fourth insulating layer 29 is approximately 60 nm thick.It is preferable for the same dry etching method as used for the thirdinsulating layer 27 to be used to etch the fourth insulating layer 29.The process then advances to step S8.

In step S8 of FIG. 6, the functional layer 32 is formed across thedisplay region E in which the pixel electrodes 31B, 31G, and 31R aredisposed so as to fill the openings 29B, 29G, and 29R (see FIG. 4).

The functional layer 32 includes a light-emitting layer that employs anorganic semiconductor material as a light-emitting material, and isconfigured of, for example, an electron hole injection layer, anelectron hole transport layer, a light-emitting layer, an electrontransport layer, an electron injection layer, and so on layered upon thepixel electrodes 31 in that order. The configuration of the functionallayer 32 is not particularly limited, however, and a known configurationcan be employed as well. For example, the functional layer 32 mayinclude light-emitting layers from which B (blue), G (green), and R(red) lights are obtained in order to achieve white light emission, mayinclude light-emitting layers from which B (blue) and orange lights areobtained in order to achieve pseudo-white light emission, or the like.Furthermore, the configuration may include an intermediate layer thatassists or inhibits the movement of electrons, holes injected into thelight-emitting layer as carriers in order to improve the luminousefficiency or the like.

The method for forming the respective layers of which the functionallayer 32 is configured is not particularly limited, and a gas-phaseprocess such as vacuum deposition, a liquid-phase process such as an inkjet method, or the like can be used. Alternatively, the functional layer32 may be formed by combining a gas-phase process and a liquid-phaseprocess. The process then advances to step S9.

In step S9 of FIG. 6, the opposing electrode 33, which is a sharedcathode, is formed so as to cover the functional layer 32 across atleast the display region E. In this embodiment, the opposing electrode33 is formed by controlling the thickness of a film using an alloycontaining Ag, for example (such as MgAg), so that the electrode bothreflects and transmits light. In consideration of damage to thefunctional layer 32 caused by moisture, heat, or the like, it ispreferable for the opposing electrode 33 to be formed using a gas-phaseprocess such as vacuum deposition. As a result, the organic EL elements30 are formed for the light-emitting pixels 20B, 20G, and 20R,respectively (see FIG. 4).

Next, a sealing layer 40 is formed so as to cover the plurality oforganic EL elements 30 formed in the display region E. In thisembodiment, the sealing layer 40 is configured of a first sealing film41 that covers the surface of the opposing electrode 33, a buffer layer42, and a second sealing film 43 that covers the buffer layer 42.

The first sealing film 41 is formed using an inorganic compound, such asa metal oxide including silicon oxide, silicon nitride, siliconoxynitride, titanium oxide, or the like, through which moisture, gasessuch as oxygen, and so on do not pass easily (that is, favorable gasbarrier properties), and that is transparent. It is also preferable touse a gas-phase process capable of forming a compact film at lowtemperatures as the formation method; high-density plasma depositionsuch as plasma CVD, ECR plasma sputtering, and so on, vacuum deposition,ion plating, and the like can be given as examples. The first sealingfilm 41 is approximately 200 to 400 nm thick.

Non-planarities are formed in the surface of the first sealing film 41due to the influence of structures provided in lower layers, such as theorganic EL elements 30. In this embodiment, the buffer layer 42 isformed covering at least the surface of the first sealing film 41corresponding to the display region E so as to flatten thenon-planarities in at least the display region E, in order to prevent adrop in the sealing performance of the second sealing film 43 caused bythe non-planarities, the adherence of foreign objects, and so on.

The buffer layer 42 is, for example, an organic resin layer using asolution in which a transparent organic resin is dissolved in a solvent,and is formed by applying the solution using a printing technique, thespin coat method, or the like and allowing the solution to dry. Epoxyresin can be given as an example of such an organic resin. From thestandpoint of flattening the non-planarities in the surface of the firstsealing film 41, covering foreign objects that have adhered to the firstsealing film 41, and so on, it is preferable for the thickness of thebuffer layer 42 to be 1 μm to 5 μm; in this embodiment, the buffer layer42 is formed of an epoxy resin approximately 3 μm thick. It ispreferable for the buffer layer 42 to be formed so as to cover at leastthe functional layer 32 as well as the opposing electrode 33, whenviewed from above. Forming the buffer layer 42 so as to cover at leastthe functional layer 32 makes it possible to flatten non-planarities atthe ends of the functional layer 32. Note that in addition to thedisplay region E, the buffer layer 42 may be formed so as to cover atleast part of the peripheral circuits (the data line driving circuit 101and the pair of scanning line driving circuits 102) on the sides of thedisplay region E (see FIG. 1).

Next, the second sealing film 43 is formed covering the buffer layer 42.Like the first sealing film 41, the second sealing film 43 is formedusing an inorganic compound that is both light-transmissive and hasfavorable gas barrier properties, and which is also water-resistant andheat-resistant. Silicon oxide, silicon nitride, and silicon oxynitridecan be given as an example of such an inorganic compound. The secondsealing film 43 can be formed using the same method as that used for thefirst sealing film 41. It is preferable for the second sealing film 43to be formed at a thickness in a range from 200 nm to 700 nm, andfurther preferable for the second sealing film 43 to be formed at athickness in a range from 300 nm to 400 nm, so that cracks do not formduring deposition. As a result, the sealing layer 40, in which the firstsealing film 41 and the second sealing film 43 are layered upon eachother with the buffer layer 42 provided therebetween, is formed in atleast the display region E (see FIGS. 4 and 5). If the buffer layer 42in the sealing layer 40 is formed so as to cover the opposing electrode33, the ends of the opposing electrode 33 can be covered by the firstsealing film 41 and the second sealing film 43 that is directly layeredthereupon.

The first sealing film 41 and the second sealing film 43 are layered incontact with each other at regions between the peripheral circuits (thedata line driving circuit 101 and the pair of scanning line drivingcircuits 102) and the end surfaces of the element substrate 10. Anopening that passes through the first sealing film 41 and the secondsealing film 43 is provided on the side of the element substrate 10corresponding to the first side area, and the external connectionterminals 103 are positioned within the opening (see FIG. 1).

Next, the color filter 50 is formed on the sealing layer 40, as shown inFIGS. 4 and 5. The color filter 50 includes the filter layers 50B, 50G,and 50R corresponding to the light-emitting pixels 20B, 20G, and 20R,respectively. The filter layers 50B, 50G, and 50R are formed by, forexample, exposing and developing a photosensitive resin layer obtainedby applying and drying a solution containing a photosensitive resinmaterial in which a coloring material such as a dye, a pigment, or thelike is dissolved or dispersed. Accordingly, the exposure anddevelopment are carried out at least three times in the case where thefilter layers 50B, 50G, and 50R are formed for three colors. Althoughthe filter layers 50B, 50G, and 50R are illustrated as having the samethicknesses in FIG. 4, in actuality, the thicknesses of the filterlayers 50B, 50G, and 50R are adjusted within a range from 1.0 μm to 2.0μm so as to obtain proper optical characteristics, such as chromaticity,white balance, and so on, when light emitted from the organic ELelements 30 passes through the respective filter layers 50B, 50G, and50R.

Furthermore, the filter layers 50B, 50G, and 50R are exposed anddeveloped so as to overlap with the corresponding pixel electrodes 31B,31G, and 31R when viewed from above. Furthermore, exposure anddevelopment may be carried out so that the borders between adjacentfilter layers are located between pixel electrodes and one filter layerpartially overlaps with another filter layer.

The element substrate 10, containing the pixel circuits, the organic ELelements 30, the sealing layer 40, and the color filter 50 formed uponthe substrate 10 s, is affixed to the sealing substrate 70 via the resinlayer 60 that is both adhesive and transparent (see FIGS. 4 and 5). Athermosetting or light curing epoxy resin material can be used for theresin layer 60, for example. After the resin material has been appliedto the element substrate 10, the sealing substrate 70 and the elementsubstrate 10 are pressed together, and the resin material is cured afterbeing pressed out to a predetermined range. This completes the organicEL apparatus 100.

In this embodiment, the configuration is such that desired colors oflight are obtained for each of the light-emitting pixels 20B, 20G, and20R as a result of the light emitted from the organic EL elements 30passing through the color filter 50. In addition, an optical resonancestructure is constructed, for each of the light-emitting pixels 20B,20G, and 20R, between the power lines 14 that function as a reflectivelayer and the opposing electrode 33, and light whose brightness has beenintensified at the resonant wavelengths corresponding to the respectiveB, G, and R colors of emitted light is obtained.

The resonant wavelengths of the light-emitting pixels 20B, 20G, and 20Rare determined by an optical distance (also called an optical pathlength) between the power lines 14 serving as a reflective layer and theopposing electrode 33.

Specifically, the structure is such that when the optical distance fromthe reflective layer to the opposing electrode 33 is represented by D, aphase shift produced by reflection at the reflective layer isrepresented by φL, a phase shift produced by reflection at the opposingelectrode 33 is represented by φU, a peak wavelength of a standing waveis represented by λ, and an integer is represented by m, the opticaldistance D fulfils the following Formula (1).

D={(2πm+φL+φU)/4π}λ  (1)

The optical distance D in the optical resonance structure for thelight-emitting pixels 20B, 20G, and 20R increases in the order of B, G,and R, and is adjusted by varying the thickness of the insulating layer28 disposed between the power lines 14 and the pixel electrodes 31.Specifically, the optical distance D is varied among the light-emittingpixels 20B, 20G, and 20R due to the first insulating layer 25 beingpresent between the power lines 14 and the pixel electrode 31B, thefirst insulating layer 25 and the second insulating layer 26 beingpresent between the power lines 14 and the pixel electrode 31G, and theinsulating layer 28 (that is, the first insulating layer 25, the secondinsulating layer 26, and the third insulating layer 27) being presentbetween the power lines 14 and the pixel electrode 31R. The opticaldistance of the insulating layer 28 can be expressed as the product of athickness (t) and the refractive index (n) of the insulating layer 28when light passes therethrough.

For example, the peak wavelength of the brightness (the resonantwavelength) in the light-emitting pixel 20B is set to 470 nm. Likewise,the peak wavelength of the brightness (the resonant wavelength) in thelight-emitting pixel 20G is set to 540 nm, and the peak wavelength ofthe brightness (the resonant wavelength) in the light-emitting pixel 20Ris set to 610 nm.

In order to achieve the stated peak wavelengths, for example, thethicknesses of the pixel electrodes 31B, 31G, and 31R that areconfigured of a transparent conductive film such as ITO are set toapproximately 100 nm as mentioned earlier, the thickness of thefunctional layer 32 is set to approximately 110 nm, m is set to 1 in theaforementioned Formula (1), and the thickness of the insulating layer 28between the reflective layer and the opposing electrode 33 is thencalculated, resulting in values of 50 nm for the light-emitting pixel20B, 115 nm for the light-emitting pixel 20G, and 170 nm for thelight-emitting pixel 20R. Accordingly, the range of the thickness of thefirst insulating layer 25 configured of silicon nitride (SiN) can be setto 40 nm to 100 nm, the range of the thickness of the second insulatinglayer 26 configured of silicon oxide (SiO₂) can be set to 40 nm to 50nm, and the range of the thickness of the third insulating layer 27configured of silicon oxide (SiO₂) can be set to 40 nm to 70 nm.

Note that in order to precisely realize the aforementioned peakwavelengths, the thickness of the insulating layer 28 that adjusts theoptical distance D for each light-emitting pixel 20 is set in accordancewith the respective refractive indices of the first insulating layer 25,the second insulating layer 26, and the third insulating layer 27 thatconfigure the insulating layer 28, the thicknesses and refractiveindices of the pixel electrodes 31 and the functional layer 32, and thethicknesses and refractive indices as well as an extinction coefficientof the power lines 14 serving as the reflective layer and the opposingelectrode 33. The refractive indices of the layers through which lightpasses depend on the wavelengths of the lights that pass therethrough.

The aforementioned first embodiment provides the following effects.

1. The first insulating layer 25 is disposed between the power lines 14that function as a reflective layer for the light-emitting pixels 20Band the pixel electrode 31B. The first insulating layer 25 and thesecond insulating layer 26 are disposed between the power lines 14 ofthe light-emitting pixels 20G and the pixel electrode 31G. The firstinsulating layer 25, the second insulating layer 26, and the thirdinsulating layer 27 are disposed between the power lines 14 of thelight-emitting pixels 20R and the pixel electrode 31R. According to thisoptical resonance structure, if the thicknesses of the first insulatinglayer 25, the second insulating layer 26, and the third insulating layer27 are controlled within a predetermined range when forming thoseinsulating layers, light at desired peak wavelengths can be obtainedfrom the organic EL elements 30B, 30G, and 30R. In other words, asopposed to a case where an optical distance adjustment layer isconfigured or formed by etching a light-transmissive film in stages sothat the optical distance varies from light-emitting pixel tolight-emitting pixel, the optical distance can be adjusted precisely inthe optical resonance structure for each of the light-emitting pixels20B, 20G, and 20R, making it possible to provide or manufacture theorganic EL apparatus 100 including the light-emitting pixels 20B, 20G,and 20R that each have desired optical characteristics.

2. The pixel electrode 31B is disposed on the first insulating layer 25exposed in the first opening 26 a formed in the second insulating layer26. The pixel electrode 31G that is adjacent to the pixel electrode 31Bin the X direction is disposed on the second insulating layer 26 exposedin the second opening 27 a formed in the third insulating layer 27. Inaddition, the pixel electrode 31R that is adjacent to the pixelelectrode 31G in the X direction is disposed on the third insulatinglayer 27. The first insulating layer 25 is formed across thelight-emitting pixels 20B, 20G, and 20R in common, and the secondinsulating layer 26 is formed across the light-emitting pixels 20G and20R in common. Accordingly, a step between the pixel electrode 31B andthe pixel electrode 31G that are adjacent in the X direction correspondsto the average thickness d2 of the second insulating layer 26. Likewise,a step between the pixel electrode 31G and the pixel electrode 31R thatare adjacent in the X direction corresponds to the average thickness d3of the third insulating layer 27. This makes it possible to reduce thesteps produced between pixel electrodes, as opposed to a case whereinsulating layers having different thicknesses are disposed in islandform between the reflective layer and the pixel electrodes fromlight-emitting pixel to light-emitting pixel. Accordingly, thefunctional layer 32, the opposing electrode 33, and the sealing layer 40that are formed spanning those steps are not easily affected by thosesteps. In other words, the opposing electrode 33, the interconnects, andso on that span the steps can be prevented from being cut. The sealingperformance of the first sealing film 41 that covers the opposingelectrode 33 can be improved as well. Finally, if, for example, theaverage thicknesses of the second insulating layer 26 and the thirdinsulating layer 27 are set to be essentially the same, variations inthe steps between the pixel electrodes can be reduced.

Second Embodiment

Next, the configuration of an organic EL apparatus serving as anelectro-optical apparatus according to a second embodiment will bedescribed with reference to FIGS. 8 to 10. FIG. 8 is a plan viewillustrating the overall configuration of a light-emitting pixel in theorganic EL apparatus according to the second embodiment, FIG. 9 is across-sectional view, taken along the X direction, illustrating theoverall structure of a light-emitting pixel in the organic EL apparatusaccording to the second embodiment, and FIG. 10 is a cross-sectionalview, taken along the Y direction, illustrating the overall structure ofthe light-emitting pixel in the organic EL apparatus according to thesecond embodiment. The organic EL apparatus serving as theelectro-optical apparatus according to the second embodiment correspondsto the organic EL apparatus 100 of the first embodiment, but with adifferent optical resonance structure for the light-emitting pixels 20B,20G, and 20R. Accordingly, configurations that are the same as those inthe organic EL apparatus 100 will be given identical reference numerals,and detailed descriptions thereof will be omitted. Note that FIG. 9 is ageneral cross-sectional view corresponding to that shown in FIG. 4 anddescribed in the first embodiment, and FIG. 10 is a generalcross-sectional view corresponding to that shown in FIG. 5 and describedin the first embodiment.

As shown in FIG. 8, in an organic EL apparatus 200 according to thisembodiment, each of the light-emitting pixels 20B, 20G, and 20R has thesame rectangular shape as in the first embodiment when viewed fromabove, with the lengthwise direction thereof following the Y direction.The organic EL elements 30B, 30G, and 30R are provided corresponding tothe light-emitting pixels 20B, 20G, and 20R, respectively.

The respective pixel electrodes 31B, 31G, and 31R of the light-emittingpixels 20B, 20G, and 20R also have approximately rectangular shapes whenviewed from above, and the contact portions 31Bc, 31Gc, and 31Rc forachieving electrical connections between the pixel electrodes 31B, 31G,and 31R and the third transistors 23 are disposed toward the tops of thecorresponding pixel electrodes in the lengthwise direction thereof.

Although details will be given later, a first opening 26 b,corresponding to the pixel electrode 31B and the pixel electrode 31Gthat are adjacent in the X direction, is provided in the secondinsulating layer 26. Likewise, a second opening 27 b corresponding tothe pixel electrode 31B is provided in the third insulating layer 27.

Furthermore, the light-emitting pixels 20B, 20G, and 20R have aninsulative structure that electrically insulates adjacent pixelelectrodes 31 from each other, and in which the openings 29B, 29G, and29R that define regions that make contact with the functional layer 32are formed on the pixel electrodes 31B, 31G, and 31R.

Next, the structure of the light-emitting pixels 20B, 20G, and 20Raccording to this embodiment will be described with reference to FIGS. 9and 10. Note that the structure of the pixel circuit in the layers belowthe power lines 14 of the element substrate 10 is the same as that inthe first embodiment, and thus the following descriptions will focus onthe optical resonance structure in the layers above the power lines 14,which is different from that in the first embodiment.

As shown in FIG. 9, the first insulating layer 25 is formed covering thepower lines 14. The first insulating layer 25 is formed across thelight-emitting pixels 20B, 20G, and 20R in common.

The second insulating layer 26 is layered upon the first insulatinglayer 25. The first opening 26 b, corresponding to the pixel electrode31B and the pixel electrode 31G that are adjacent in the X direction, isformed in the second insulating layer 26. The pixel electrode 31B isformed on the first insulating layer 25 in the first opening 26 b.

The third insulating layer 27 is layered upon the second insulatinglayer 26. Specifically, the third insulating layer 27 is layered uponthe second insulating layer 26 so as to fill essentially half of thefirst opening 26 b. As a result, the second opening 27 b correspondingto the pixel electrode 31B is formed in the third insulating layer 27.The pixel electrode 31G is formed on the third insulating layer 27 inthe first opening 26 b. Meanwhile, the pixel electrode 31R is formed onthe third insulating layer 27 that covers the second insulating layer26. To rephrase, the third insulating layer 27 is formed correspondingto the pixel electrode 31G and the pixel electrode 31R that are adjacentin the X direction.

The fourth insulating layer 29 is formed so as to cover the outer edgesof the pixel electrodes 31B, 31G, and 31R. As a result, the pixelelectrodes 31B, 31G, and 31R are insulated from each other, and theopenings 29B, 29G, and 29R are formed above the pixel electrodes 31B,31G, and 31R, respectively.

The functional layer 32 is formed across the light-emitting pixels 20B,20G, and 20R in common, making contact with the pixel electrodes 31B,31G, and 31R. The opposing electrode 33 is formed so as to cover thefunctional layer 32. The first sealing film 41 is formed so as to coverthe opposing electrode 33. The buffer layer 42 is formed so as to coverthe first sealing film 41, across at least the display region E. Thesecond sealing film 43 is formed so as to cover the buffer layer 42.Meanwhile, although not shown in FIG. 9, the second sealing film 43 isformed so as to cover the areas of the first sealing film 41 not coveredby the buffer layer 42.

The filter layers 50B, 50G, and 50R (the color filter 50) correspondingto the respective light-emitting pixels 20B, 20G, and 20R are formed onthe second sealing film 43 flattened by the buffer layer 42, or in otherwords, on the sealing layer 40.

Next, the optical resonance structure of the light-emitting pixels 20(the light-emitting pixels 20G), following the Y direction, will bedescribed with reference to FIG. 10. As shown in FIG. 10, the pixelelectrodes 31G adjacent in the Y direction are formed on the thirdinsulating layer 27 that fills the first openings 26 b in the secondinsulating layer 26. Meanwhile, the pixel electrodes 31G are formed onthe third insulating layer 27 so as to make contact with contact holes107 that are electrically connected to the source electrodes 23 s of thethird transistors 23. The contact holes 107 are formed so as to passthrough the insulating layer 28 (the first insulating layer 25, thesecond insulating layer 26, and the third insulating layer 27), andareas where the contact holes 107 make contact with the pixel electrodes31G correspond to the contact portions 31Gc. Electrical connections withthe source electrodes 23 s of the third transistors 23 corresponding tothe pixel electrodes 31B and 31R in the other light-emitting pixels 20Band 20R are realized by the contact portions 31Bc and 31Rc, which havethe same structure as the contact portions 31Gc of the light-emittingpixels 20G.

The element substrate 10, containing the pixel circuits, the organic ELelements 30 including the optical resonance structure, the sealing layer40, and the color filter 50 formed upon the substrate 10 s, is affixedto the sealing substrate 70 via the resin layer 60. In other words, theorganic EL apparatus 200 is also a top emission light-emittingapparatus.

Manufacturing Method for Electro-Optical Apparatus

Next, a manufacturing method for the organic EL apparatus 200 serving asa manufacturing method for an electro-optical apparatus according tothis embodiment will be described with reference to FIGS. 11 and 12A to12F. FIG. 11 is a flowchart illustrating the manufacturing method forthe organic EL apparatus according to the second embodiment, and FIGS.12A to 12F are cross-sectional views illustrating an overview of themanufacturing method for the organic EL apparatus according to thesecond embodiment.

A manufacturing method for the organic EL apparatus 200 serving as theelectro-optical apparatus according to this embodiment includes, asshown in FIG. 11, a first insulating layer formation process (step S11),a second insulating layer formation process (step S12), a first openingformation process (step S13), a third insulating layer formation process(step S14), a second opening formation process (step S15), a pixelelectrode formation process (step S16), a fourth insulating layerformation process (step S17), a functional layer formation process (stepS18), and an opposing electrode formation process (step S19).

In step S11 to step S12 of FIG. 11, the first insulating layer 25 isformed so as to cover the power line 14, as shown in FIG. 12A. Then, thesecond insulating layer 26 is formed as a layer upon the firstinsulating layer 25. In this embodiment, silicon nitride (SiN) is usedas the insulating material of which the first insulating layer 25 isformed. Silicon oxide (SiO₂) is used as the insulating material of whichthe second insulating layer 26 is formed. Different insulating materialsare used in this manner so as to provide the first insulating layer 25with an etching selection ratio when patterning the second insulatinglayer 26 and the third insulating layer 27, which is carried out in alater stage. The process then advances to step S13.

In step S13 of FIG. 11, a photosensitive resist layer is formed so as tocover the second insulating layer 26, and a resist pattern 83 is formedby exposing and developing the resist layer, as shown in FIG. 12B. Anopening 83 a that corresponds to the first opening 26 b (see FIG. 12C)is formed in the resist pattern 83. Then, by partially etching thesecond insulating layer 26 exposed in the opening 83 a, the firstopening 26 b, in which the pixel electrode 31B of the light-emittingpixel 20B and the pixel electrode 31G of the light-emitting pixel 20Gwill be disposed later when viewed from above, is formed, as shown inFIGS. 8 and 12C. As the method for etching the second insulating layer26 that is formed of silicon oxide, it is preferable to employ dryetching using a processing gas containing fluorine, such as CF₄, C₂F₈,or the like. The process then advances to step S14.

In step S14 to step S15 of FIG. 11, first, the third insulating layer 27is formed so as to fill the first opening 26 b formed in the secondinsulating layer 26 and cover the second insulating layer 26, as shownin FIG. 12D. Silicon oxide (SiO₂) is used as the insulating material ofwhich the third insulating layer 27 is formed. Then, a photosensitiveresist layer is formed so as to cover the third insulating layer 27, anda resist pattern 84 is formed by exposing and developing the resistlayer. An opening 84 a that corresponds to the second opening 27 b (seeFIG. 12E) is formed in the resist pattern 84. The resist pattern 84 isformed covering the third insulating layer 27 so that one end of theopening 84 a is at the same position as one end of the first opening 26b in the second insulating layer 26, and essentially half of the surfacearea of the third insulating layer 27 that fills the first opening 26 bis exposed. Furthermore, the second opening 27 b, in which the pixelelectrode 31B of the light-emitting pixel 20B will be disposed laterwhen viewed from above, is formed in the first opening 26 b by partiallyetching the third insulating layer 27 exposed within the opening 84 a,as shown in FIGS. 8 and 12E. The same dry etching method as used for thesecond insulating layer 26 is used to etch the third insulating layer27. The process then advances to step S16.

In step S16 of FIG. 11, a transparent conductive film is deposited so asto cover the second opening 27 b as well as the third insulating layer27; the pixel electrode 31B is formed within the second opening 27 b andthe pixel electrode 31G is formed on the third insulating layer 27 thatfills the first opening 26 b by patterning the transparent conductivefilm, as shown in FIG. 12F. At the same time, the pixel electrode 31R isformed on the third insulating layer 27 that covers the secondinsulating layer 26. The transparent conductive film is an indium tinoxide (ITO) film or an indium zinc oxide (IZO) film, for example. Thepixel electrodes 31B, 31G, and 31R are approximately 100 nm thick. As aresult, the first insulating layer 25 is present between the power line14 and the pixel electrode 31B, the first insulating layer 25 and thethird insulating layer 27 are present between the power line 14 and thepixel electrode 31G, and the first insulating layer 25, the secondinsulating layer 26, and the third insulating layer 27 are presentbetween the power line 14 and the pixel electrode 31R. When an averagethickness of the first insulating layer 25 is represented by d1, anaverage thickness of the second insulating layer 26 is represented byd2, and an average thickness of the third insulating layer 27 isrepresented by d3, the thickness of the insulating layer 28 between thepixel electrode 31B and the pixel electrode 31G that are adjacent in theX direction is d4, obtained by adding d1 and d3. Furthermore, thethickness of the insulating layer 28 between the pixel electrode 31G andthe pixel electrode 31R that are adjacent in the X direction is d5,obtained by adding d1, d2, and d3. To rephrase, a step equivalent to d3is produced in the X direction between the pixel electrode 31B and thepixel electrode 31G. Likewise, a step equivalent to d2 is producedbetween the pixel electrode 31G and the pixel electrode 31R in the Xdirection.

The aforementioned second embodiment provides the following effects.

1. The first insulating layer 25 is disposed between the power lines 14that function as a reflective layer for the light-emitting pixels 20Band the pixel electrode 31B. The first insulating layer 25 and the thirdinsulating layer 27 are disposed between the power lines 14 of thelight-emitting pixels 20G and the pixel electrode 31G. The firstinsulating layer 25, the second insulating layer 26, and the thirdinsulating layer 27 are disposed between the power lines 14 of thelight-emitting pixels 20R and the pixel electrode 31R. According to thisoptical resonance structure, if the thicknesses of the first insulatinglayer 25, the second insulating layer 26, and the third insulating layer27 are controlled within a predetermined range when forming thoseinsulating layers, light at desired peak wavelengths can be obtainedfrom the organic EL elements 30B, 30G, and 30R. In other words, asopposed to a case where an optical distance adjustment layer isconfigured or formed by etching a light-transmissive film in stages sothat the optical distance varies from light-emitting pixel tolight-emitting pixel, the optical distance can be adjusted precisely inthe optical resonance structure for each of the light-emitting pixels20B, 20G, and 20R, making it possible to provide or manufacture theorganic EL apparatus 200 including the light-emitting pixels 20B, 20G,and 20R that each have desired optical characteristics.

2. The pixel electrode 31B is disposed on the first insulating layer 25exposed in the first opening 26 b formed in the second insulating layer26. The pixel electrode 31G that is adjacent to the pixel electrode 31Bin the X direction is disposed on the third insulating layer 27 thatfills the first opening 26 b. In addition, the pixel electrode 31R thatis adjacent to the pixel electrode 31G in the X direction is disposed onthe third insulating layer 27 layered upon the second insulating layer26. The first insulating layer 25 is formed across the light-emittingpixels 20B, 20G, and 20R in common, and the second insulating layer 26is formed corresponding to the light-emitting pixels 20R. The thirdinsulating layer 27 is formed corresponding to the pixel electrode 31Gand the pixel electrode 31R. Accordingly, a step between the pixelelectrode 31B and the pixel electrode 31G that are adjacent in the Xdirection corresponds to the average thickness d3 of the thirdinsulating layer 27. Likewise, a step between the pixel electrode 31Gand the pixel electrode 31R that are adjacent in the X directioncorresponds to the average thickness d2 of the second insulating layer26. This makes it possible to reduce the steps produced between pixelelectrodes, as opposed to a case where insulating layers havingdifferent thicknesses are disposed in island form between the reflectivelayer and the pixel electrodes from light-emitting pixel tolight-emitting pixel. Accordingly, the functional layer 32, the opposingelectrode 33, and the sealing layer 40 that are formed spanning thosesteps are not easily affected by those steps. In other words, theopposing electrode 33, the interconnects, and so on that span the stepscan be prevented from being cut. The sealing performance of the firstsealing film 41 that covers the opposing electrode 33 can be improved aswell. Finally, if, for example, the average thicknesses of the secondinsulating layer 26 and the third insulating layer 27 are set to beessentially the same, variations in the steps between the pixelelectrodes can be reduced.

Third Embodiment

Next, an electronic device serving as a third embodiment will bedescribed with reference to FIG. 13. FIG. 13 is a schematic diagramillustrating a head-mounted display serving as an example of anelectronic device.

As shown in FIG. 13, a head-mounted display (HMD) 1000 serving as theelectronic device according to this embodiment includes two displayunits 1001 provided corresponding to left and right eyes. By wearing thehead-mounted display 1000 on the head like a pair of glasses, a viewer Mcan view text, images, and the like displayed in the display units 1001.If, for example, parallactic images are displayed in the left and rightdisplay units 1001, the viewer M can enjoy viewing three-dimensionalvideo.

The display units 1001 each include the organic EL apparatus 100according to the first embodiment (or the organic EL apparatus 200according to the second embodiment), which is a self-luminous displayapparatus. Accordingly, the head-mounted display 1000, which has desiredoptical characteristics, superior display quality, and is lightweight,can be provided.

The head-mounted display 1000 is not limited to a configuration in whichthe viewer M directly views the content displayed in the display units1001, and may be configured so that the viewer M views the displayedcontent indirectly via a mirror or the like.

Furthermore, the head-mounted display 1000 is not limited to having twodisplay units 1001, and may be configured including only a singledisplay unit 1001 corresponding to either the left or right eye.

Note also that the electronic device in which the aforementioned organicEL apparatus 100 or the aforementioned organic EL apparatus 200 isapplied is not limited to the head-mounted display 1000. Electronicdevices such as a head-up display, display units in an electronic viewfinder (EVF) in a digital camera, a mobile information terminal, anavigation device, and so on can be given as further examples. Furtherstill, the invention is not limited to display units, and can also beapplied in illumination apparatuses, exposure apparatuses, and so on.

The invention is not intended to be limited to the aforementionedembodiments, and many variations can be made thereon without departingfrom the essential spirit of the invention as set forth in the appendedaspects of the invention and the specification as a whole;electro-optical apparatuses, manufacturing methods for suchelectro-optical apparatuses, and electronic devices that apply suchelectro-optical apparatuses derived from such modifications also fallwithin the technical scope of the invention. Many variations can also beconsidered in addition to the aforementioned embodiments. Several suchvariations will be described hereinafter.

First Variation

The location where the third insulating layer 27 is disposed in theorganic EL apparatus 100 is not limited to that described above. FIG. 14is a plan view illustrating an overview of the location of a thirdinsulating layer in an organic EL apparatus according to a firstvariation. For example, as shown in FIG. 14, an organic EL apparatus 150according to the first variation has the first opening 26 a, provided inthe second insulating layer 26 in correspondence with the pixelelectrode 31B. The pixel electrode 31B is disposed on the firstinsulating layer 25 exposed in the first opening 26 a. The pixelelectrode 31G that is adjacent to the pixel electrode 31B in the Xdirection is disposed on the second insulating layer 26 layered upon thefirst insulating layer 25. In addition, the pixel electrode 31R that isadjacent to the pixel electrode 31G in the X direction is disposed onthe third insulating layer 27, which is provided in an island shape onthe second insulating layer 26 in correspondence with the pixelelectrode 31R. According to this configuration, the third insulatinglayer 27 is not disposed in the periphery of the pixel electrode 31G,and in particular, in the periphery of the contact portion 31Gc, makingit possible to reduce a rise in resistance in the pixel electrode 31Gand other interconnects that span the steps. Likewise, the thirdinsulating layer 27 is not disposed in the periphery of the contactportion 31Rc of the light-emitting pixel 20R, and thus the same effectscan be achieved.

Second Variation

The location where the third insulating layer 27 is disposed in theorganic EL apparatus 200 is not limited to that described above. FIG. 15is a plan view illustrating an overview of the location of a thirdinsulating layer in an organic EL apparatus according to a secondvariation. For example, as shown in FIG. 15, an organic EL apparatus 250according to the second variation has the first opening 26 b, providedin the second insulating layer 26 in correspondence with the pixelelectrode 31B and the pixel electrode 31G. The pixel electrode 31B isdisposed on the first insulating layer 25 exposed in the first opening26 b. The pixel electrode 31G that is adjacent to the pixel electrode31B in the X direction is disposed on the third insulating layer 27,which fills the first opening 26 b and is disposed in an island shape incorrespondence with the pixel electrode 31G and the pixel electrode 31R.In addition, the pixel electrode 31R that is adjacent to the pixelelectrode 31G in the X direction is disposed on the third insulatinglayer 27 disposed in an island shape. According to this configuration,the third insulating layer 27 is not disposed in the periphery of thepixel electrode 31G and the pixel electrode 31R, and in particular, inthe periphery of the contact portions 31Gc and 31Rc, making it possibleto reduce a rise in resistance in the pixel electrodes 31G and 31R andother interconnects that span the steps. Further, a region between thepixel electrode 31G and the pixel electrode 31R in the X direction canbe flattened. In other words, a step produced between the pixelelectrode 31G and the pixel electrode 31R in the X direction can bereduced.

Third Variation

The configurations of the light-emitting pixels 20B, 20G, and 20R arenot limited to those in the organic EL apparatus 100 or the organic ELapparatus 200. For example, the color filter 50 is not limited to beingformed on the element substrate 10 side, and may be formed on thesealing substrate 70 side instead. Furthermore, the color filter 50 isnot a necessary constituent element, and the configuration may be suchthat desired colors of light are obtained from the organic EL elements30 in the light-emitting pixels 20B, 20G, and 20R, respectively.

The entire disclosure of Japanese Patent Application No. 2013-118567,filed Jun. 5, 2013 is expressly incorporated by reference herein.

What is claimed is:
 1. A light-emitting device comprising: a substrate;an opposing electrode provided on the substrate; a light-reflectivelayer provided between the substrate and the opposing electrode; alight-emitting layer disposed between the light-reflective layer and theopposing electrode; a first pixel electrode disposed between thelight-reflective layer and the light-emitting layer; a second pixelelectrode disposed between the light-reflective layer and thelight-emitting layer, the second pixel electrode being provided adjacentto the first pixel electrode; a first insulating layer disposed betweenthe light-reflective layer and the first pixel electrode, the firstinsulating layer being disposed between the light-reflective layer andthe second pixel electrode, the first insulating layer contacting thefirst pixel electrode and the second pixel electrode, the firstinsulating layer provided across under the first pixel electrode andunder the second pixel electrode in common, and a second insulatinglayer disposed between the light-reflective layer and the firstinsulating layer, the second insulating layer overlapping the firstpixel electrode in plan view, wherein at least part of an edge of thesecond insulating layer is disposed in a first region that is betweenthe first pixel electrode and the second pixel electrode in plan view.2. The light-emitting device according to claim 1, wherein in plan view,edges of the first insulating layer does not overlap edges of the secondinsulating layer.
 3. The light-emitting device according to claim 2,further comprising: a third pixel electrode disposed between thelight-reflective layer and the light-emitting layer, the third pixelelectrode provided adjacent to the second pixel electrode; and a thirdinsulating layer disposed between the light-reflective layer and thethird pixel electrode, the third insulating layer contacting with thethird pixel electrode, the first insulating layer and the secondinsulating layer, the third insulating layer provided across under thefirst pixel electrode, under the second pixel electrode and under thethird pixel electrode in common, wherein at least one of an edge of thefirst insulating layer is disposed in a second region that between thesecond pixel electrode and the third pixel electrode in plan view. 4.The light-emitting device according to claim 3, wherein at least one ofthe first, second and third insulating layer is made of a materialdifferent from others of the first, second and third insulating layers.5. The light-emitting device according to claim 4, wherein the firstinsulating layer is formed of silicon oxide; the second insulating layeris formed of silicon oxide; and the third insulating layer is formed ofsilicon nitride.
 6. The light-emitting device according to claim 1,further comprising a sealing layer covering the opposing electrode. 7.The light-emitting device according to claim 6, further comprising acolor filter formed on the sealing layer.
 8. The light-emitting deviceaccording to claim 1, wherein the light-emitting layer includes anorganic semiconductor material as a light-emitting material.
 9. Thelight-emitting device according to claim 1, wherein the substrate isformed of silicon.
 10. An electronic apparatus comprising thelight-emitting device according to claim
 1. 11. An electronic apparatuscomprising the light-emitting device according to claim
 2. 12. Anelectronic apparatus comprising the light-emitting device according toclaim
 3. 13. An electronic apparatus comprising the light-emittingdevice according to claim
 4. 14. An electronic apparatus comprising thelight-emitting device according to claim
 5. 15. An electronic apparatuscomprising the light-emitting device according to claim
 6. 16. Anelectronic apparatus comprising the light-emitting device according toclaim
 7. 17. An electronic apparatus comprising the light-emittingdevice according to claim
 8. 18. An electronic apparatus comprising thelight-emitting device according to claim 9.